Consumer-oriented applications benefit from high integration levels and the use of low-cost technology with relaxed lateral feature size. The Silicon-Germanium (SiGe) hetero-structure bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology used in this work gives a good foundation for both. In this technology the RF properties of active devices with 0.8µm feature size already make 24 GHz applications feasible. The utilized SiGe HBT MMIC foundry processes has been analyzed, optimized according to the needed performance for the circuit design and electrically modeled.The link-budget of a simple data communication link has been used to derive specifications for a 24GHz transceiver front-end. The technology used to realize the ICs has been analyzed. Necessary improvements have been added at the layout level, followed by the development of electrical models for all RF design components.Rules have been developed for designing IC with high integration level, which are affecting the circuit topology as well as the layout. The coupling and isolation issues of devices on silicon have been analyzed and design techniques are proposed to achieve complete isolation between function blocks on a multi-function chip.The choice, design methods, critical points and measured performance are discussed and presented for the individual function blocks. The developed function blocks have been assembled into a fully integrated receiver and transmitter front-end, emphasizing the maximal reuse of function blocks in the design and validating the developed design methods. For an on-chip antenna, the design, coupling issues with integrated circuits and measured performance are discussed, demonstrating a fully integrated 24GHz transceiver IC with on-chip receive and transmit antennas.
